当前位置: 科学研究> 学术动态>

【电气论坛】Maximizing the efficiency of CMOS front-illuminated photovoltaic for self-powered sensor applications(IGBSG 2019) 国际会议专题报告(4)

点击:1004次 发布人:kyb 发布时间:2019-09-04 16:58:15


Maximizing the efficiency of CMOS front-illuminated   photovoltaic for self-powered sensor applications





Prof.   Poki Chen




Poki Chen was born in Chia-Yi, Taiwan, R.O.C., in 1963. He received the B.S.,   M.S. and Ph.D. degrees in Electrical Engineering Department from National   Taiwan University (NTU), Taipei, Taiwan, in 1985, 1987 and 2001,   respectively. During 1998-2001, 2001-2006 and 2006-2011 he was a Lecturer, an   Assistant Professor, and an Associate Professor correspondingly in Electronic   Engineering Department of National Taiwan University of Science and   Technology (NTUST). He is a Professor in Electronic and Computer Engineering   Department of NTUST. Currently, he serves as the Associate Editors for IEEE   Transactions on Very Large Scale Integration Systems (TVLSI) and IEEE Access   since 2011 and 2013. He is the organizer of IEEE International Conference on   Intelligent Green Building and Smart Grid (IGBSG) since 2014 and serves as   keynote/invited speakers, TPC members, session chairs for various IEEE   conferences, such as SOCC, VLSI-DAT, IFEEC, ISESD, NoMe TDC, ISNE, ASID … and   so forth. His research interests include analog / mixed-signal IC design and   layout with special interest in time-domain signal processing circuits, such   as time-domain smart temperature sensor, time-to-digital converter (TDC),   digital pulse converter (DTC), time-domain ADC and high accuracy DAC. He is   also interested in creating innovative analog applications for FPGA   platforms, such as FPGA smart temperature sensor, FPGA digital-to-time and   time-to-digital converters.


There is a tremendous   need for sensors to accommodate the booming markets for IoT, Industry 4.0,   intelligent building, environmental monitoring, home security and care,   health care system and even implanted electronic medicine. One of the major   challenges is to power such enormous sensors in an efficient and inexpensive   way. Either wired or wireless power supply is not only money- but also   time-wasting for outdoor applications. Energy harvestings become popular and   viable solutions to compose the so-called self-power sensors. Among them,   on-chip solar cell gets much more attention than the others due to its   readiness and easiness to access.


To get high conversion   efficiency, back-illuminated solar cell can be adopted. However, it requires   expensive non-standard processing such as substrate thinning, substrate   removal, surface texturing and Integrated Passive Devices (IPD) flip-chip   packaging. To be fully integrated with the standard CMOS circuits, front-illuminated solar cell is a   much better alternative at the expense of lower efficiency due to the   shielding effect of metal lines for photocurrent conduction. Different CMOS   layers and layout topologies are explored to increase the PN junction   depletion region density per area and the corresponding aperture ratio to   enhance the conversion efficiency. The photovoltaic chips from a few   batches and processes are measured and compared. Some easy-to-understand   rules are summarized to maximize the output power of front-illuminated CMOS   solar cell. With the standard TSMC 0.18mm CMOS process, a record-breaking 31.5% conversion efficiency is   finally achieved.